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NSL5TT1 Datasheet, PDF (2/5 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Switching Transistor | |||
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NSL5TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = â10 mAdc, IB = 0)
V(BR)CEO
Collector âBase Breakdown Voltage
(IC = â0.01 mAdc, IE = 0)
V(BR)CBO
Emitter âBase Breakdown Voltage
(IE = â0.01 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = â5.0 Vdc, IE = 0)
CollectorâEmitter Cutoff Current
(VCES = â5.0 Vdc)
ICBO
ICES
Emitter Cutoff Current
(VEB = â4.0 Vdc)
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = â10 mA, VCE = â1.0 V)
(IC = â150 mA, VCE = â2.0 V)
(IC = â500 mA, VCE = â2.0 V)
Collector âEmitter Saturation Voltage (Note 1)
(IC = â50 mA, IB = â0.5 mA)
(IC = â100 mA, IB = â1.0 mA)
(IC = â250 mA, IB = â2.5 mA)
(IC = â250 mA, IB = â5.0 mA)
(IC = â500 mA, IB = â5.0 mA)
(IC = â500 mA, IB = â50 mA)
(IC = â1.0 A, IB = â100 mA)
Base âEmitter Saturation Voltage (Note 1)
(IC = â150 mA, IB = â20 mA)
hFE
VCE(sat)
VBE(sat)
Base âEmitter Turnâon Voltage (Note 1)
(IC = â150 mA, VCE = â3.0 V)
1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ⤠2%
VBE(on)
Min
â5.0
â10
â4.0
â
â
â
100
100
100
â
â
â
â
â
â
â
â
â
Typical
Max
Unit
â9.0
â15
â7.0
â0.03
â0.03
â0.01
Vdc
â
Vdc
â
Vdc
â
mAdc
â0.1
mAdc
â0.1
mAdc
â0.1
250
â
250
â
200
â
V
â0.050
â
â0.080
â
â0.130
â
â0.110
â
â0.240
â
â0.180
â
â0.340
â
V
â0.81
â0.9
V
â0.81
â0.875
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