NSL5TT1 Datasheet, PDF (1/5 Pages) ON Semiconductor – High Current Surface Mount PNP Silicon Switching Transistor

NSL5TT1
Advance Information
High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Peak
Collector Current − Continuous
V_CEO
V_CBO
V_EBO
I_C
−5.0
Vdc
−10
Vdc
−4.0
Vdc
−1.0
Adc
−0.5
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
P_D (Note 1.)
210
mW
1.7
mW/°C
R_θJA (Note 1.)
595
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead #3
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
P_D (Note 2.)
365
mW
2.9
mW/°C
R_θJA (Note 2.)
340
°C/W
R_θJL
205
°C/W
T_J, T_stg
−55 to
°C
+150
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
5 VOLTS
1.0 AMPS
PNP TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT−416/SC−75
STYLE 1
DEVICE MARKING
L3
ORDERING INFORMATION
Device
Package
Shipping
NSL5TT1
SOT−416 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
Publication Order Number:
NSL5TT1/D