NSD914F3T5G Datasheet, PDF(2/4 Page) ON Semiconductor

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NSD914F3T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – High-Speed Switching Diode

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NSD914F3T5G

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(IR = 100 mAdc)

Reverse Voltage Leakage Current

(VR = 20 Vdc)

(VR = 75 Vdc)

Diode Capacitance

(VR = 0, f = 1.0 MHz)

Forward Voltage

(IF = 10 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

1. FRâ5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

Symbol

Min

V(BR)

100

trr

Typ

Max

Unit

Vdc

nAdc

5.0

mAdc

4.0

1.0

Vdc

4.0

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