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NSD914F3T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – High-Speed Switching Diode | |||
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NSD914F3T5G
High-Speed Switching
Diode
The NSD914F3T5G device is a spinâoff of our popular SOTâ23
threeâleaded device. It is designed for high speed switching
applications and is housed in the SOTâ1123 surface mount package.
This device is ideal for lowâpower surface mount applications where
board space is at a premium.
Features
⢠Reduces Board Space
⢠This is a HalideâFree Device
⢠This is a PbâFree Device
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
100
IF
200
IFM(surge)
500
Vdc
mAdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
290
mW
(Note 1)
2.3
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
432
(Note 1)
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
347
mW
(Note 2)
2.8
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
360
(Note 2)
°C/W
Thermal Resistance,
JunctionâtoâLead 3
RYJL
143
(Note 2)
°C/W
Junction and Storage Temperature Range TJ, Tstg â55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
http://onsemi.com
3
CATHODE
1
ANODE
NSD914F3T5G
3
12
SOTâ1123
CASE 524AA
STYLE 2
MARKING DIAGRAM
RM
R = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shippingâ
NSD914F3T5G
SOTâ1123 8000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
January, 2009 â Rev. 0
Publication Order Number:
NSD914F3/D
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