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NSD16F3T5G_14 Datasheet, PDF (2/4 Pages) ON Semiconductor – Switching Diode
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NSD16F3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
IR
mAdc
−
1.0
−
50
−
30
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
75
−
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
mV
−
715
−
855
−
1000
−
1250
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
2.0
pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR
−
1.75
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr
−
6.0
ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W)
QS
−
45
pC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
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