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NSD16F3T5G_14 Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode
NSD16F3T5G
Switching Diode
The NSD16F3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for switching applications and is
housed in the SOT−1123 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.
Features
• Reduces Board Space
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
75
IF
200
IFM(surge)
500
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol Max
Unit
PD
290
mW
(Note 1)
2.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
432
(Note 1)
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
347
mW
(Note 2)
2.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
360
(Note 2)
°C/W
Thermal Resistance,
Junction−to−Lead 3
RYJL
143
(Note 2)
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
http://onsemi.com
3
CATHODE
1
ANODE
NSD16F3T5G
3
12
SOT−1123
CASE 524AA
STYLE 2
MARKING DIAGRAM
TM
T = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NSD16F3T5G
SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
May, 2014 − Rev. 1
Publication Order Number:
NSD16F3/D