English
Language : 

NSBC114EPDXV6_04 Datasheet, PDF (2/14 Pages) ON Semiconductor – Dual Bias Resistor Transistors
NSBC114EPDXV6T1, NSBC114EPDXV6T5
DEVICE MARKING AND RESISTOR VALUES
Device
Package
NSBC114EPDXV6T1
SOT−563
NSBC124EPDXV6T1
SOT−563
NSBC144EPDXV6T1
SOT−563
NSBC114YPDXV6T1
SOT−563
NSBC114TPDXV6T1 (Note 2)
SOT−563
NSBC143TPDXV6T1 (Note 2)
SOT−563
NSBC113EPDXV6T1 (Note 2)
SOT−563
NSBC123EPDXV6T1 (Note 2)
SOT−563
NSBC143EPDXV6T1 (Note 2)
SOT−563
NSBC143ZPDXV6T1 (Note 2)
SOT−563
NSBC124XPDXV6T1 (Note 2)
SOT−563
NSBC123JPDXV6T1 (Note 2)
SOT−563
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R1 (kW)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
NSBC114EPDXV6T1
IEBO
−
−
NSBC124EPDXV6T1
−
−
NSBC144EPDXV6T1
−
−
NSBC114YPDXV6T1
−
−
NSBC114TPDXV6T1
−
−
NSBC143TPDXV6T1
−
−
NSBC113EPDXV6T1
−
−
NSBC123EPDXV6T1
−
−
NSBC143EPDXV6T1
−
−
NSBC143ZPDXV6T1
−
−
NSBC124XPDXV6T1
−
−
NSBC123JPDXV6T1
−
−
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
NSBC114EPDXV6T1
hFE
NSBC124EPDXV6T1
NSBC144EPDXV6T1
NSBC114YPDXV6T1
NSBC114TPDXV6T1
NSBC143TPDXV6T1
NSBC113EPDXV6T1
NSBC123EPDXV6T1
NSBC143EPDXV6T1
NSBC143ZPDXV6T1
NSBC124XPDXV6T1
NSBC123JPDXV6T1
35
60
60
100
80
140
80
140
160
350
160
350
3.0
5.0
8.0
15
15
30
80
200
80
150
80
140
Collector-Emitter Saturation Voltage
VCE(sat)
−
−
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) NSBC113EPDXV6T1/NSBC123EPDXV6T1
(IC = 10 mA, IB = 1 mA) NSBC114TPDXV6T1/NSBC143TPDXV6T1
NSBC143EPDXV6T1/NSBC143ZPDXV6T1/NSBC124XPDXV6T1
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R2 (kW)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
Max
Unit
100
nAdc
500
nAdc
0.5
mAdc
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
−
Vdc
−
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
http://onsemi.com
2