NSBC114EPDXV6_04 Datasheet, PDF (13/14 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1
1000
1000
T_A = 25°C
T_A = 25°C
V_CE = 10 V
V_CE = 5.0 V
V_CE = 10 V
V_CE = 5.0 V
100
100
1.0
10
100
1.0
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 42. DC Current Gain − PNP
Figure 43. DC Current Gain − NPN
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1
1000
1000
T_A = 25°C
T_A = 25°C
V_CE = 10 V
V_CE = 5.0 V
V_CE = 10 V
V_CE = 5.0 V
100
100
1.0
10
100
1.0
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 44. DC Current Gain − PNP
Figure 45. DC Current Gain − NPN
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