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NSB1010XV5T5 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual Common Base−Collector Bias Resistor Transistors
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NSB1010XV5T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = −50 V, IE = 0)
Collector-Emitter Cutoff Current (VCB = −50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = −6.0 V, IC = 0)
Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 2) (IC = −2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 2)
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
Collector-Emitter Saturation Voltage (IC = −10 mA, IB = −1.0 mA)
DC Current Gain (VCE = −10 V, IC = −5.0 mA)
Output Voltage (on) (VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW)
Input Resistor
Resistor Ratio
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
VCE(sat)
hFE
VOL
VOH
R1
R1/R2
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA)
ON CHARACTERISTICS
ICBO
ICEO
IEBO
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
V(BR)CBO
V(BR)CEO
hFE
VCE(SAT)
VOL
VOH
R1
Resistor Ratio
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
R1/R2
Min
−
−
−
−50
−50
−
15
−
−4.9
3.3
0.8
−
−
−
50
50
35
−
−
4.9
7.0
0.8
Typ
Max
Unit
−
−100
nAdc
−
−500
nAdc
−
−1.5
mAdc
−
−
Vdc
−
−
Vdc
−
−0.25
Vdc
27
−
−
−
−0.2
Vdc
−
−
Vdc
4.7
6.1
kW
1.0
1.2
−
−
100
nAdc
−
500
nAdc
−
0.5
mAdc
−
−
Vdc
−
−
Vdc
60
−
−
0.25
Vdc
−
0.2
Vdc
−
−
Vdc
10
13
kW
1.0
1.2
−
250
200
150
100
50
0−50
RqJA = 833°C/W
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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