NRVUB1620CTRT4G Datasheet, PDF (2/6 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R, T_C = 160°C)
Per Leg
Per Total Device
V_RRM
200
V
V_RWM
V_R
I_F(AV)
A
8.0
16
Peak Repetitive Surge Current
(Rated V_R, Square Wave, 20 kHz, T_C = 140°C)
Per Diode
I_FM
A
16
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_FSM
100
A
Operating Junction and Storage Temperature Range
T_J, T_stg
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (D²PAK)
Symbol
R_qJC
R_qJA
Value
2.0
45
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 8.0 Amps, T_C = 25°C)
(i_F = 8.0 Amps, T_C = 150°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T_C = 25°C)
(Rated dc Voltage, T_C = 150°C)
Maximum Reverse Recovery Time
(I_F = 1.0 Amp, di/dt = 50 Amps/ms)
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
Symbol
v_F
i_R
t_rr
Value
1.2
1.1
5.0
500
85
Unit
V
mA
ns
ORDERING INFORMATION
Device
Package
Shipping^†
MUR1620CTRG
TO−220
(Pb−Free)
50 Units / Rail
MURB1620CTRG
D²PAK−3
(Pb−Free)
50 Units / Rail
MURB1620CTRT4G
D²PAK−3
(Pb−Free)
800 / Tape & Reel
NRVUB1620CTRT4G
D²PAK−3
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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