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| NP2600SA1 Datasheet, PDF (2/3 Pages) ON Semiconductor – BIDIRECTIONAL TSPD 50, 80, AND 100 AMP SURGE 260 VOLTS HIGH HOLD CURRENT 270 mA MIN | |||
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NP2600SA1, NP2600SB1, NP2600SC1
THERMAL CHARACTERISTICS
Operating Temperature Range
Blocking or Conducting State
Characteristic
Symbol
Max
Unit
TJ1
-Ä40 to +Ä125
°C
Overload Junction Temperature - Maximum Conducting State Only
TJ2
+Ä175
°C
Instantaneous Peak Power Dissipation (Ipk = 80 A, 10x1000 msec @ 25°C)
PPK
4000
W
Maximum Lead Temperature for Soldering Purposes 1/8â³ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Breakover Voltage (Both Polarities)
(dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V)
Breakdown Voltage (I(BR) = 1.0 mA) Both Polarities
Off State Current (VD1 = 50 V) Both Polarities
Off State Current (VD2 = VDRM) Both Polarities
On-State Voltage (IT = 2.2 A)
(PW ⤠300 ms, Duty Cycle ⤠2%) (Note 4)
Breakover Current (f = 60 Hz, VDRM = 1000 VRMS, RS = 1.0 kW)
Both polarities
Symbol
V(BO)
VDRM
ID1
ID2
VT
I(BO)
Min
Typ
-
-
220
-
-
-
-
-
-
1.53
-
260
Holding Current (Both Polarities) (Note 4)
VS = 500 V; IT (Initiating Current) = "1.0 A
Critical Rate of Rise of Off-State Voltage
(Linear waveform, VD = Rated V(BO), TJ = 25°C)
Capacitance (f = 1.0 MHz, 2.0 Vdc) (Note 5)
NP2600SA1
NP2600SB1
NP2600SC1
IH
dv/dt
C0
270
-
2000
-
-
80
-
60
-
30
4. Measured under pulse conditions to reduce heating.
5. Signal level 1.0 VRMS.
tr = rise time to peak value
100
Peak
Value
tf = decay time to half value
+I
IT
I(BO)
IH
50
Half Value
Max
300
-
2.0
5.0
4.0
800
-
-
-
-
-
Unit
V
V
mA
V
mA
mA
V/ms
pF
0
0 tr
tf
TIME (ms)
Figure 1. Exponential Decay Pulse Waveform
-V oltage
+Voltage
VT
VDRM V(BO)
-I
Figure 2. Voltage Current Characteristic of TSPD
Symbol
VDRM
V(BO)
I(BO)
IH
VT
IT
Parameters
Peak Off State Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
On State Current
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