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| MV104_06 Datasheet, PDF (2/3 Pages) ON Semiconductor – DUAL VOLTAGE VARIABLE CAPACITANCE DIODE | |||
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MV104
TYPICAL CHARACTERISTICS (Each Diode)
100
550
70
450
40
350
250
TA = 25°C
20
f = 100 MHz
150
10
0.3 0.5
1.0
2.0 3.0 5.0 7.0 10
VR, REVERSE VOLTAGE (VOLTS)
20 30
Figure 1. Diode Capacitance (Each Diode)
50
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit versus Voltage
2000
1000
VR = 3.0 Vdc
TA = 25°C
500
200
100
50
20
10
20 30
50 70 100
f, FREQUENCY (MHz)
200 300
Figure 3. Figure of Merit versus Frequency
1.04
1.03
VR = 2.0 V
1.02
4.0 V
1.01
1.00
30 V
0.99
0.98
NORMALIZED to CT
at TA = 25°C
0.97
0.96
â75 â50 â25
0 +25 +50 +75 +100 +125
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Diode Capacitance versus Temperature
100
50
TA = 125°C
20
10
5
2
TA = 75°C
1
0.5
0.2
0.1
TA = 25°C
0.05
0.02
0.01
0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Reverse Current versus Reverse Voltage
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