MV104_06 Datasheet, PDF (1/3 Pages) ON Semiconductor – DUAL VOLTAGE VARIABLE CAPACITANCE DIODE

ON Semiconductort
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top−of−the−line application requiring
back−to−back diode configurations for minimum signal distortion and
detuning.
• High Figure of Merit ⎯ Q = 140 (Typ) @ V_R = 3.0 Vdc, f = 100
MHz
• Guaranteed Capacitance Range
37−42 pF @ V_R = 3.0 Vdc (MV104)
• Dual Diodes − Save Space and Reduce Cost
• Monolithic Chip Provides Near Perfect Matching − Guaranteed ±
1.0% (Max) Over Specified Tuning Range
w This device is available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Total Power Dissipation @ T_A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V_R
I_F
P_D
T_J
T_stg
Value
32
200
280
2.8
+125
−55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
MV104
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
1
2
3
CASE 29 −11, STYLE 15
TO−92 (TO −226AA)
Pin 1
Pin 3
A1
A2
Pin 2 C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min
Reverse Breakdown Voltage
(I_R = 10 μAdc)
Reverse Voltage Leakage Current T_A = 25°C
(V_R = 30 Vdc)
T_A = 60°C
V_(BR)R
32
I_R
—
—
Diode Capacitance Temperature Coefficient
(V_R = 4.0 Vdc, f = 1.0 MHz)
TC_C
—
MV104
Device
C_T, Diode Capacitance
V_R = 3.0 Vdc, f = 1.0 MHz
pF
Min
Max
37
42
Q, Figure of Merit
V_R = 3.0 Vdc
f = 100 MHz
Min
Typ
100
140
Typ
Max
Unit
—
—
Vdc
—
50
nAdc
—
500
280
—
ppm/°C
C_R, Capacitance Ratio
C₃/C₃₀
f = 1.0 MHz
Min
Max
2.5
2.8
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 4
Publication Order Number:
MV104/D