MURA260T3G_12 Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Ultrafast Power Rectifier

MURA260T3G, SURA8260T3G
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
Average Rectified Forward Current
@ T_L = 145C
@ T_L = 110C
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
Value
600
1.0
2.0
30
Unit
V
A
A
Operating Junction Temperature Range
T_J
−65 to +175
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Thermal Resistance, Junction−to−Lead (T_L = 25C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Psi_JL
24
(Note 2)
R_qJA
216
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by R_qJL) are now referenced as Psi_JL.
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i_F = 2.0 A, T_J = 25C)
(i_F = 2.0 A, T_J = 150C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, T_J = 25C)
(Rated DC Voltage, T_J = 150C)
Maximum Reverse Recovery Time
(i_F = 1.0 A, di/dt = 50 A/ms)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.
Symbol
v_F
i_R
t_rr
Max
1.45
1.20
5.0
150
75
Unit
V
mA
ns
http://onsemi.com
2