MTD20P06HDL Datasheet, PDF (2/8 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

MTD20P06HDL
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 mAdc)
Temperature Coefficient (Positive)
V_(BR)DSS
60
−
−
81.3
Vdc
−
−
mV/°C
Zero Gate Voltage Drain Current
(V_DS = 60 Vdc, V_GS = 0 Vdc)
(V_DS = 60 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ±15 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 3)
I_DSS
mAdc
−
−
1.0
−
−
10
I_GSS
−
−
100 nAdc
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 mAdc)
Temperature Coefficient (Negative)
V_GS(th)
Vdc
1.0
1.7
2.0
−
3.9
−
mV/°C
Static Drain−Source On−Resistance
(V_GS = 5.0 Vdc, I_D = 7.5 Adc)
Drain−Source On−Voltage (V_GS = 5.0 Vdc)
(I_D = 15 Adc)
(I_D = 7.5 Adc, T_J = 125°C)
Forward Transconductance (V_DS = 10 Vdc, I_D = 7.5 Adc)
DYNAMIC CHARACTERISTICS
R_DS(on)
−
143
175
mW
V_DS(on)
Vdc
−
2.3
3.0
−
1.6
2.0
g_FS
9.0
11
−
mhos
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
C_iss
C_oss
C_rss
−
850
1190
pF
−
210
290
−
66
130
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V_DS = 30 Vdc, I_D = 15 Adc,
V_GS = 5.0 Vdc,R_G = 9.1 W)
(V_DS = 48 Vdc, I_D = 15 Adc,
V_GS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
−
19
38
ns
−
175
350
−
41
82
−
68
136
−
20.6
29
nC
−
3.7
−
−
7.6
−
−
8.4
−
Forward On−Voltage
(I_S = 15 Adc, V_GS = 0 Vdc)
V_SD
(I_S = 15 Adc, V_GS = 0 Vdc, T_J = 125°C)
Vdc
−
2.5
3.0
−
1.9
−
Reverse Recovery Time
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
(I_S = 15 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/ms)
t_rr
t_a
t_b
Q_RR
−
64
−
ns
−
50
−
−
14
−
−
0.177
−
mC
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L_D
−
4.5
−
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
L_S
−
7.5
−
nH
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