MTD20P03HDL Datasheet, PDF (2/9 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

MTD20P03HDL
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 mAdc)
Temperature Coefficient (Positive)
(C_pk ≥ 2.0) (Note 5)
Zero Gate Voltage Drain Current
(V_DS = 30 Vdc, V_GS = 0 Vdc)
(V_DS = 30 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ±15 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(C_pk ≥ 2.0) (Note 5)
Static Drain−to−Source On−Resistance
(V_GS = 4.0 Vdc, I_D = 10 Adc)
(V_GS = 5.0 Vdc, I_D = 9.5 Adc)
(C_pk ≥ 2.0) (Note 5)
Drain−to−Source On−Voltage (V_GS = 5.0 Vdc)
(I_D = 19 Adc)
(I_D = 9.5 Adc, T_J = 125°C)
Forward Transconductance (V_DS = 8.0 Vdc, I_D = 9.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = 15 Vdc, I_D = 19 Adc,
V_GS = 5.0 Vdc, R_G = 1.3 W)
Fall Time
Gate Charge
(See Figure 8)
(V_DS = 24 Vdc, I_D =19 Adc,
V_GS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(C_pk ≥ 2.0) (Note 5)
(I_S = 19 Adc, V_GS = 0 Vdc)
(I_S = 19 Adc, V_GS = 0 Vdc, T_J = 125°C)
Reverse Recovery Time
(See Figure 15)
(I_S = 19 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values. C_pk = Absolute Value of Spec (Spec−AVG/3.516 mA).
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
V_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
t_rr
t_a
t_b
Q_RR
L_D
L_S
Min
Typ Max Unit
Vdc
30
−
−
−
15
− mV/°C
mAdc
−
−
10
−
−
100
−
−
100 nAdc
Vdc
1.0
1.5
2.0
−
4.0
− mV/°C
mW
−
120
−
90
99
Vdc
−
0.94 2.2
−
−
1.9
5.0
6.0
− mhos
−
770 1064 pF
−
360 504
−
130 182
−
18
25.2
ns
−
178 246.4
−
21 26.6
−
72
98
−
15 22.4 nC
−
3.0
−
−
11
−
−
8.2
−
Vdc
−
3.1
3.4
−
2.56
−
−
78
−
ns
−
50
−
−
28
−
−
0.209
−
mC
nH
−
4.5
−
nH
−
7.5
−
http://onsemi.com
2