MTB2N60E Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 600 VOLTS

MTB2N60E
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 μAdc)
Temperature Coefficient (Positive)
V_(BR)DSS
600
—
—
480
Vdc
—
—
mV/°C
Zero Gate Voltage Drain Current
(V_DS = 600 Vdc, V_GS = 0 Vdc)
(V_DS = 480 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 μAdc)
Threshold Temperature Coefficient (Negative)
I_DSS
I_GSS
V_GS(th)
μAdc
—
—
0.25
—
—
1.0
—
—
100
nAdc
2.0
3.1
4.0
Vdc
—
8.5
—
mV/°C
Static Drain−to−Source On−Resistance (V_GS = 10 Vdc, I_D = 1.0 Adc)
Drain−to−Source On−Voltage
(V_GS = 10 Vdc, I_D = 2.0 Adc)
(V_GS = 10 Vdc, I_D = 1.0 Adc, T_J = 125°C)
Forward Transconductance (V_DS = 50 Vdc, I_D = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 300 Vdc, I_D = 2.0 Adc,
V_GS = 10 Vdc,
R_G = 18 Ω)
Gate Charge
(See Figure 8)
(V_DS = 400 Vdc, I_D = 2.0 Adc,
V_GS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 2.0 Adc, V_GS = 0 Vdc)
(I_S = 2.0 Adc, V_GS = 0 Vdc, T_J = 125°C)
Reverse Recovery Time
(I_S = 2.0 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/μs)
R_DS(on)
V_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
t_rr
—
3.0
3.8
Ohm
Vdc
—
—
8.2
—
—
8.4
1.0
—
—
mhos
—
435
—
pF
—
100
—
—
20
—
—
12
—
ns
—
21
—
—
30
—
—
24
—
—
13
—
nC
—
2.0
—
—
6.0
—
—
5.0
—
—
1.0
1.6
Vdc
—
0.9
—
ns
—
340
—
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L_D
nH
—
3.5
—
Internal Source Inductance
L_S
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
nH
—
7.5
—
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