MSD602-RT1G_14 Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN General Purpose Amplifier Transistor Surface Mount

MSD602−RT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(I_C = 10 mA, I_B = 0)
V_(BR)CEO
V
50
−
Collector−Base Breakdown Voltage
(I_C = 10 mA, I_E = 0)
V_(BR)CBO
V
60
−
Emitter−Base Breakdown Voltage
(I_E = 10 mA, I_C = 0)
V_(BR)EBO
V
7.0
−
Collector−Base Cutoff Current
(V_CB = 20 V, I_E = 0)
I_CBO
−
mA
0.1
DC Current Gain (Note 1)
(V_CE = 10 V, I_C = 150 mA)
(V_CE = 10 V, I_C = 500 mA)
−
h_FE1
120
240
h_FE2
40
−
Collector−Emitter Saturation Voltage
(I_C = 300 mA, I_B = 30 mA)
V_CE(sat)
V
−
0.6
Base−Emitter On Voltage
(I_C = 300 mA, V_CE = 5 V)
V_BE(on)
V
−
1.0
Base−Emitter Saturation Voltage
(I_C = 300 mA, I_B = 30 mA)
V_BE(sat)
V
−
1.0
Output Capacitance
(V_CB = 10 V, I_E = 0, f = 1.0 MHz)
C_ob
−
pF
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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