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MSD602-RT1G_14 Datasheet, PDF (1/5 Pages) ON Semiconductor – NPN General Purpose Amplifier Transistor Surface Mount | |||
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MSD602-RT1G
NPN General Purpose
Amplifier Transistor
Surface Mount
Features
⢠S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECâQ101 Qualified and
PPAP Capable
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorâBase Voltage
V(BR)CBO
60
CollectorâEmitter Voltage
V(BR)CEO
50
EmitterâBase Voltage
V(BR)EBO
7.0
Collector Current â Continuous
IC
500
Collector Current â Peak
IC(P)
1.0
THERMAL CHARACTERISTICS
Vdc
Vdc
Vdc
mAdc
Adc
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
â55 ~ +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
SCâ59
CASE 318D
STYLE 1
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
WR M G
G
WR
= Specific Device Code
M
= Date Code
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
MSDâ602RT1G SCâ59 3,000 / Tape & Reel
(PbâFree)
SMSDâ602RT1G SCâ59 3,000 / Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 â Rev. 10
Publication Order Number:
MSD602âRT1/D
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