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MSD601-RT1_12 Datasheet, PDF (2/3 Pages) ON Semiconductor – NPN General Purpose Amplifier Transistors Surface Mount | |||
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MSD601âRT1, MSD601âST1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector â Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Collector â Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter â Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector â Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
Collector â Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601âRT1
MSD601âST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
Collector â Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width ⤠300 ms, D.C. ⤠2%.
Symbol
Min
Max
Unit
V(BR)CEO
50
â
Vdc
V(BR)CBO
60
â
Vdc
V(BR)EBO
7.0
â
Vdc
ICBO
â
0.1
mAdc
ICEO
â
100
nAdc
hFE1
hFE2
VCE(sat)
â
210
340
290
460
90
â
â
0.5
Vdc
ORDERING INFORMATION
Device
Package
Shippingâ
MSDâ601RT1
SCâ59
3000 / Tape & Reel
MSDâ601RT1G
SCâ59
(PbâFree)
3000 / Tape & Reel
MSDâ601ST1
SCâ59
3000 / Tape & Reel
MSDâ601ST1G
SCâ59
(PbâFree)
3000 / Tape & Reel
â For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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