MSD601-RT1_12 Datasheet, PDF (1/3 Pages) ON Semiconductor – NPN General Purpose Amplifier Transistors Surface Mount

MSD601-RT1, MSD601-ST1
Preferred Device
NPN General Purpose
Amplifier Transistors
Surface Mount
Features
• Pb−Free Packages are Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector − Base Voltage
V_(BR)CBO
60
Collector − Emitter Voltage
V_(BR)CEO
50
Emitter − Base Voltage
V_(BR)EBO
7.0
Collector Current − Continuous
I_C
100
Collector Current − Peak
I_C(P)
200
THERMAL CHARACTERISTICS
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Symbol
Max
Unit
Power Dissipation
P_D
200
mW
Junction Temperature
T_J
150
°C
Storage Temperature
T_stg
−55 ~ +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
BASE
2
EMITTER
MARKING
DIAGRAM
SC−59
CASE 318D
Yx M G
G
x=
M=
G=
R for RT1
S for ST1
Date Code
Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2012
1
July, 2012 − Rev. 9
Publication Order Number:
MSD601−RT1/D