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| MSC2712GT1_05 Datasheet, PDF (2/4 Pages) ON Semiconductor – General Purpose Amplifier Transistor | |||
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MSC2712GT1, MSC2712YT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
CollectorâEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
CollectorâBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
EmitterâBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
CollectorâBase Cutoff Current
(VCB = 45 Vdc, IE = 0)
CollectorâEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
MSC2712GT1
MSC2712YT1
CollectorâEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Current âGain â Bandwidth Product
(IC = 1 mA, VCE = 10.0 V, f = 10 MHz)
1. Pulse Test: Pulse Width ⤠300 ms, D.C. ⤠2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
hFE
VCE(sat)
fT
Min
Max
Unit
50
â
Vdc
60
â
Vdc
7.0
â
Vdc
â
0.1
mAdc
â
0.1
mAdc
â
2.0
mAdc
â
1.0
mAdc
â
200
400
120
240
â
0.5
Vdc
MHz
50
â
http://onsemi.com
2
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