MSC2712GT1_05 Datasheet, PDF (1/4 Pages) ON Semiconductor – General Purpose Amplifier Transistor

MSC2712GT1, MSC2712YT1
General Purpose
Amplifier Transistor
NPN Surface Mount
Features
• Moisture Sensitivity Level: 1
• Pb−Free Packages are Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V_(BR)CBO
60
Vdc
Collector−Emitter Voltage
V_(BR)CEO
50
Vdc
Emitter−Base Voltage
V_(BR)EBO
7.0
Vdc
Collector Current − Continuous
I_C
100
mAdc
Collector Current − Peak
I_C(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P_D
200
mW
Junction Temperature
T_J
150
°C
Storage Temperature
T_stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
BASE
1
EMITTER
3
2
1
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAMS
12G M G
G
12Y M G
G
12M, 12Y = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MSC2712GT1
SC−59 3000/Tape & Reel
MSC2712GT1G SC−59 3000/Tape & Reel
(Pb−Free)
MSC2712YT1
SC−59 3000/Tape & Reel
MSC2712YT1G SC−59 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
May, 2005 − Rev. 5
Publication Order Number:
MSC2712GT1/D