 English |
|
|
|
|
|
|
|
| MSB92T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – PNP Silicon General Purpose High Voltage Transistor | |||
| |||
| ◁ |
ELECTRICAL CHARACTERISTICS
Characteristic
CollectorâEmitter Breakdown Voltage
(IC = -1.0 mAdc, IB = 0)
CollectorâBase Breakdown Voltage
(IC = -100 mAdc, IE = 0)
EmitterâBase Breakdown Voltage
(IE = -100 mAdc, IE = 0)
CollectorâBase Cutoff Current
(VCB = -200 Vdc, IE = 0)
Emitter-Base Cutoff Current
(VEB = -3.0 Vdc, IB = 0)
DC Current Gain (Note 2)
(VCE = -10 Vdc, IC = -1.0 mAdc)
(VCE = -10 Vdc, IC = -10 mAdc)
(VCE = -10 Vdc, IC = -30 mAdc)
CollectorâEmitter Saturation Voltage
(IC = -20 mAdc, IB = -2.0 mAdc)
Base-Emitter Saturation Voltage
(IC = -20 mAdc, IB = -2.0 mAdc)
SMALL SIGNAL CHARACTERISTICS
CurrentÄ-ÄGain - Bandwidth Product
(IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB = -20 Vdc, IE = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width ⤠300 ms, D.C. ⤠2%.
MSB92T1G
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
Min
Max
Unit
-300
-
Vdc
-300
-
Vdc
-5.0
-
Vdc
-
-0.25
mA
-
-0.1
mA
-
25
-
40
-
25
-
-
-0.5
Vdc
-
-0.9
Vdc
fT
50
-
MHz
Ccb
-
6.0
pF
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese