MSB92T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – PNP Silicon General Purpose High Voltage Transistor

MSB92T1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-59 package
which is designed for low power surface mount applications.
Features
•ăThis is a Pb-Free Device
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector‐Base Voltage
V_(BR)CBO
Collector‐Emitter Voltage
V_(BR)CEO
Emitter‐Base Voltage
V_(BR)EBO
Collector Current - Continuous
I_C
THERMAL CHARACTERISTICS
-300
-300
-5.0
150
Vdc
Vdc
Vdc
mAdc
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P_D
150
mW
Junction Temperature
T_J
150
°C
Storage Temperature Range
T_stg
-ā55X+ā150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR‐4 glass epoxy printed circuit board using the minimum
recommended footprint.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
MARKING
DIAGRAM
3
SC-59
CASE 318D
2
1
STYLE 1
J2D MG
G
J2D= Device Marking Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
MSB92T1G
SC-59 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
August, 2007 - Rev. 0
Publication Order Number:
MSB92T1G/D