MMVL809T1 Datasheet, PDF (2/3 Pages) Leshan Radio Company – Silicon Tuning Diode

MMVL809T1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Reverse Breakdown Voltage
(I_R = 10 mAdc)
Reverse Voltage Leakage Current
(V_R = 15 Vdc)
V_(BR)R
20
I_R
−
C_t, Diode Capacitance
V_R = 2.0 Vdc, f = 1.0 MHz
pF
Device
Min
Typ
Max
MMVL809T1
4.5
5.3
6.1
2. C_R is the ratio of C_t measured at 2.0 Vdc divided by C_t measured at 8.0 Vdc.
Q, Figure of Merit
V_R = 3.0 Vdc
f = 500 MHz
Typ
75
Typ
Max
Unit
−
−
Vdc
−
50
nAdc
C_R, Capacitance Ratio
C₂/C₈ (Note 2)
f = 1.0 MHz
Min
Max
1.8
2.6
TYPICAL CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
0.5 1
2 3 45
8 10 15
V_R, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000
V_R = 3 Vdc
T_A = 25°C
100
10
0.1
1.0
10
f, FREQUENCY (GHz)
Figure 2. Figure of Merit
1000
V_R = 3.0 Vdc
f = 1.0 MHz
800
600
400
0
0.2
0.4
0.6
0.8
1.0
f, FREQUENCY (GHz)
Figure 3. Series Resistance
1.04
1.03
V_R = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
1.2
−75 −50 −25 0 +25 +50 +75 +100 +125
T_A, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
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