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MMVL809T1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Silicon Tuning Diode
MMVL809T1
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid−state reliability in replacement of
mechanical tuning methods.
Features
• Controlled and Uniform Tuning Ratio
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Continuous Reverse Voltage
Peak Forward Current
THERMAL CHARACTERISTICS
VR
20
Vdc
IF
20
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board,
TA = 25°C (Note 1)
Derate above 25°C
PD
200
mW
1.57 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
635 °C/W
Junction and Storage Temperature
TJ, Tstg
150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad
http://onsemi.com
4.5 − 6.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODE
1
CATHODE
2
ANODE
2
1
PLASTIC
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
5K M G
G
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
5K = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMVL809T1 SOD−323 3000 / Tape & Reel
MMVL809T1G SOD−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
MMVL809T1/D