MMVL3401T1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Silicon Pin Diode

MMVL3401T1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I_R = 10 mAdc)
Diode Capacitance
(V_R = 20 Vdc)
Series Resistance (Figure 5)
(I_F = 10 mAdc, f = 100 MHz)
Reverse Leakage Current
(V_R = 25 Vdc)
Symbol
V_(BR)R
C_T
R_S
I_R
Min
Typ
Max
Unit
35
−
−
Vdc
−
−
1.0
pF
−
−
0.7
W
−
−
0.1
mAdc
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
T_A = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 2.0 4.0 6.0 8.0 10 12 14 16
I_F, FORWARD CURRENT (mA)
Figure 1. Series Resistance
20
10
7.0
5.0
T_A = 25°C
2.0
1.0
0.7
0.5
0.2
+3.0 0 3.0 6.0 9.0 12 15 18 21 24 27
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
50
40
30
20
10
0
0.5
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001
60
T_A = 25°C
0.6
0.7
0.8
0.9
1.0
V_F, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
V_R = 25 Vdc
20 0 +20
+60
+100
+140
T_A, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
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