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MMUN2211LT1G_10 Datasheet, PDF (2/18 Pages) ON Semiconductor – Bias Resistor Transistor NPN Silicon Surface Mount Transistor
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MMUN2211LT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2211LT1G
IEBO
−
MMUN2212LT1G
−
MMUN2213LT1G
−
MMUN2214LT1G
−
MMUN2215LT1G
−
MMUN2216LT1G
−
MMUN2230LT1G
−
MMUN2231LT1G
−
MMUN2232LT1G
−
MMUN2233LT1G
−
MMUN2234LT1G
−
MMUN2238LT1G
−
MMUN2241LT1G
−
−
100
nAdc
−
500
nAdc
−
0.5
mAdc
−
0.2
−
0.1
−
0.2
−
0.9
−
1.9
−
4.3
−
2.3
−
1.5
−
0.18
−
0.13
−
4.0
−
0.1
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
−
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2211LT1G
hFE
35
60
−
MMUN2212LT1G
60
100
−
MMUN2213LT1G
80
140
−
MMUN2214LT1G
80
140
−
MMUN2215LT1G
160
350
−
MMUN2216LT1G
160
350
−
MMUN2230LT1G
3.0
5.0
−
MMUN2231LT1G
8.0
15
−
MMUN2232LT1G
15
30
−
MMUN2233LT1G
80
200
−
MMUN2234LT1G
80
150
−
MMUN2238LT1G
160
350
−
MMUN2241LT1G
160
350
−
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 1 mA)
(IC = 10 mA, IB = 5 mA)
VCE(sat)
MMUN2211LT1G
−
MMUN2212LT1G
−
MMUN2213LT1G
−
MMUN2214LT1G
−
MMUN2233LT1G
−
MMUN2234LT1G
−
MMUN2215LT1G
−
MMUN2216LT1G
−
MMUN2232LT1G
−
MMUN2238LT1G
−
MMUN2230LT1G
−
MMUN2231LT1G
−
MMUN2241LT1G
−
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
Vdc
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
−
0.25
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