MMUN2111LT1_05 Datasheet, PDF (2/8 Pages) ON Semiconductor – Bias Resistor Transistors

MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Device*
Package
Marking
MMUN2111LT1, G
MMUN2111LT3, G
SOT−23
A6A
MMUN2112LT1, G
SOT−23
A6B
MMUN2113LT1, G
MMUN2113LT3, G
SOT−23
A6C
MMUN2114LT1, G
SOT−23
A6D
MMUN2115LT1, G (Note 3)
SOT−23
A6E
MMUN2116LT1, G (Note 3)
SOT−23
A6F
MMUN2130LT1, G (Note 3)
SOT−23
A6G
MMUN2131LT1, G (Note 3)
SOT−23
A6H
MMUN2132LT1, G (Note 3)
SOT−23
A6J
MMUN2133LT1, G (Note 3)
SOT−23
A6K
MMUN2134LT1, G (Note 3)
SOT−23
A6L
*The “G’’ suffix indicates Pb−Free package available.
3. New devices. Updated curves to follow in subsequent data sheets.
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
Shipping
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V_CB = 50 V, I_E = 0)
Collector-Emitter Cutoff Current (V_CE = 50 V, I_B = 0)
Emitter-Base Cutoff Current
(V_EB = 6.0 V, I_C = 0)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
I_CBO
I_CEO
I_EBO
−
−
100
nAdc
−
−
500
nAdc
−
−
0.5
mAdc
−
−
0.2
−
−
0.1
−
−
0.2
−
−
0.9
−
−
1.9
−
−
4.3
−
−
2.3
−
−
1.5
−
−
0.18
−
−
0.13
Collector-Base Breakdown Voltage (I_C = 10 mA, I_E = 0)
Collector-Emitter Breakdown Voltage (Note 4)
(I_C = 2.0 mA, I_B = 0)
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V_(BR)CBO
50
−
V_(BR)CEO
50
−
−
Vdc
−
Vdc
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