MMDL914T1G_11 Datasheet, PDF(2/4 Page) ON Semiconductor

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MMDL914T1G_11 Datasheet, PDF (2/4 Pages) ON Semiconductor – High-Speed Switching Diode

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MMDL914T1G, SMMDL914T1G, MMDL914T3G

ELECTRICAL CHARACTERISTICS (TA = 25ï°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(IR = 100 mAdc)

Reverse Voltage Leakage Current

(VR = 20 Vdc)

(VR = 75 Vdc)

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

Forward Voltage

(IF = 10 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

Symbol

Min

V(BR)

100

trr

Max

Unit

Vdc

nAdc

5.0

mAdc

4.0

Vdc

1.0

4.0

820ï W

+10 V

2.0 k

100 mH IF

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

D.U.T.

0.1 mF

10%

50 W INPUT

SAMPLING

OSCILLOSCOPE

90%

INPUT SIGNAL

trr

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp Â» trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

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