MMDL770T1 Datasheet, PDF (2/4 Pages) Leshan Radio Company – Schottky Barrier Diode

MMDL770T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 µA)
V(BR)R
70
–
Volts
–
Diode Capacitance
(VR = 20 Volts, f = 1.0 MHZ)
CT
pF
–
0.5
1.0
Reverse Leakage
(VR = 35 V)
IR
nAdc
–
9.0
200
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
VF
Vdc
–
0.7
1.0
2.0
MMBD770T1
1.6
1.2
TYPICAL CHARACTERISTICS
f = 1.0 MHz
500
MMBD770T1
400
KRAKAUER METHOD
300
0.8
200
0.4
100
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
MMBD770T1
1.0
TA = 100°C
TA = 75°C
0.1
0.01
TA = 25°C
100
MMBD770T1
10
TA = 85°C
TA = -ā40°C
1.0
TA = 25°C
0.001
0
0.1
10
20
30
40
50
0.2 0.4
0.8
1.2
1.6
2.0
VR, REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
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