MMDL770T1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Schottky Barrier Diode

MMDL770T1
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance – 1.0 pF @ 20 V
• Low Reverse Leakage – 200 nA (max)
• High Reverse Voltage – 70 Volts (min)
• Available in 8 mm Tape and Reel
• Device Marking: 5H
http://onsemi.com
1.0 pF SCHOTTKY
BARRIER DIODE
MAXIMUM RATINGS
Symbol
Rating
VR
Reverse Voltage
THERMAL CHARACTERISTICS
Symbol
Characteristic
PD
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
R_qJA
TJ, Tstg
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Value Unit
70
Vdc
Max Unit
200 mW
1.57 mW/°C
635 °C/W
–55 to °C
+150
1
2
PLASTIC
SOD–323
CASE 477
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMDL770T1 SOD–323 3000 / Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
January, 2000 – Rev. 0
Publication Order Number:
MMDL770T1/D