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MMDF7N02Z Datasheet, PDF (2/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS
MMDF7N02Z
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current
Continuous @ TA = 25°C (Note 1.)
Continuous @ TA = 70°C (Note 1.)
Pulsed Drain Current (Note 3.)
Total Power Dissipation @ TA = 25°C (Note 1.)
Linear Derating Factor @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
Linear Derating Factor @ TA = 25°C (Note 2.)
Operating and Storage Temperature Range
THERMAL RESISTANCE
Parameter
Junction−to−Ambient (Note 1.)
Junction−to−Ambient (Note 2.)
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
Max
20
20
±12
7.0
4.6
35
2.0
16
1.39
11.11
− 55 to 150
Symbol Typ
RqJA
−
−
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Notes 4. & 5.) V(BR)DSS
20
−
−
15
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)
IGSS
−
−
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Notes 4. & 5.)
VGS(th)
(VDS = VGS, ID = 0.25 mAdc)
0.5
0.7
Threshold Temperature Coefficient (Negative)
−
2.5
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 7.0 Adc)
(VGS = 2.5 Vdc, ID = 3.5 Adc)
(Cpk ≥ 2.0) (Notes 4. & 5.)
RDS(on)
−
23
−
30
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) (Note 4.)
gFS
5.0
11
1. When mounted on 1″ square FR4 or G−10 board (VGS = 10 V, @ 10 seconds).
2. When mounted on minimum recommended FR4 or G−10 board (VGS = 10 V, @ Steady State).
3. Repetitive rating; pulse width limited by maximum junction temperature.
4. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
5. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Max
Unit
62.5
°C/W
90
Max
Unit
Vdc
−
−
mV/°C
µAdc
1.0
10
3.0
µAdc
Vdc
1.0
−
mV/°C
mΩ
27
35
−
Mhos
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