MMDF7N02Z Datasheet, PDF (1/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS

MMDF7N02Z
Power MOSFET
7 Amps, 20 Volts
N−Channel SO−8, Dual
EZFETst are an advanced series of Power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R_DS(on) and true
logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. EZFET devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc−dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 200 V Machine Model and 2000 V Human
Body Model
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode is Characterized for use in Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
http://onsemi.com
7 AMPERES
20 VOLTS
R_DS(on) = 27 mΩ
N−Channel
D
G
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
7N02Z
LYWW
1
7N02Z
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MMDF7N02ZR2
SO−8 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
September, 2004 − Rev. XXX
Publication Order Number:
MMDF7N02Z/D