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MMDF5N02Z Datasheet, PDF (2/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS | |||
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MMDF5N02Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainâtoâSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ⥠2.0) (Note 4.) V(BR)DSS
20
â
â
15
Vdc
â
â
mV/°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateâBody Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ⥠2.0)
(Note 4.)
IDSS
IGSS
VGS(th)
µAdc
â
â
0.5
â
â
15
â
â
150
â
â
1.5
µAdc
Vdc
0.5
0.78
1.1
â
3.0
â
mV/°C
Static DrainâtoâSource OnâResistance
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(VGS = 2.7 Vdc, ID = 2.5 Adc)
(Cpk ⥠2.0) (Note 4.)
Forward Transconductance (VDS = 9.0 Vdc, ID = 2.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
(VDD = 6.0 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc, RG = 6 â¦)
Fall Time
Gate Charge
(VDS = 10 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc)
SOURCEâDRAIN DIODE CHARACTERISTICS
Forward OnâVoltage
(IS = 5.0 Adc, VGS = 0 Vdc)
(IS = 5.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit â Typ
Cpk =
3 x SIGMA
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
â
34
â
44
3.0
5.6
mâ¦
40
50
â
Mhos
â
450
630
pF
â
330
460
â
160
225
â
29
37
ns
â
182
258
â
190
238
â
225
274
â
10.7
12
nC
â
1.1
â
â
5.4
â
â
3.5
â
Vdc
â
0.78
1.0
â
0.65
â
â
195
â
ns
â
72
â
â
123
â
â
0.5
â
µC
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