MMDF4P03HD Datasheet, PDF (2/8 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 30 VOLTS

MMDF4P03HD
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 0.25 mAdc)
Zero Gate Voltage Drain Current
(V_DS = 24 Vdc, V_GS = 0 Vdc)
(V_DS = 24 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ±20 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V_(BR)DSS
30
I_DSS
−
−
I_GSS
−
V_GS(th)
1.0
Static Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 3.5 Adc)
(V_GS = 4.5 Vdc, I_D = 2.0 Adc)
R_DS(on)
−
−
Forward Transconductance (V_DS = 15 Vdc, I_D = 3.5 Adc)
g_FS
−
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 24 Vdc,
V_GS = 0 Vdc,
f = 1.0 MHz)
C_iss
−
C_oss
−
C_rss
−
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 15 Vdc,
V_GS = 10 Vdc,
I_D = 1.0 Adc,
R_G = 6.0 Ω)
t_d(on)
−
t_r
−
t_d(off)
−
t_f
−
Gate Charge
(See Figure 8)
(V_DS = 10 Vdc,
I_D = 3.5 Adc,
V_GS = 10 Vdc)
Q_T
−
Q₁
−
Q₂
−
Q₃
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 1.7 Adc, V_GS = 0 Vdc)
(I_S = 1.7 Adc, V_GS = 0 Vdc,
T_J = 125°C)
V_SD
−
−
Reverse Recovery Time
t_rr
−
(I_S = 3.5 Adc,
V_GS = 0 Vdc,
dI_S/dt = 100 A/μs)
t_a
−
t_b
−
Reverse Recovery Stored Charge
Q_RR
−
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
−
−
μAdc
−
1.0
−
20
−
100
nAdc
Vdc
−
−
0.075
0.125
6.0
0.085
0.16
−
Ω
Mhos
425
600
pF
209
300
57.2
80
11.7
23.4
ns
15.8
31.6
167.3 334.6
102.6 205.2
14.8
29.6
nC
1.7
−
4.7
−
3.42
−
Vdc
0.9
1.2
0.7
−
77.4
−
ns
19.9
−
57.5
−
0.088
−
μC
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