MMDF4P03HD Datasheet, PDF (1/8 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 30 VOLTS

MMDF4P03HD
Preferred Device
Power MOSFET
4 A, 30 V, P−Channel SO−8, Dual
Dual MOSFET devices are designed for use in low voltage, high
speed switching applications where power efficiency is important.
Typical applications are dc−dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives.
• Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T_A = 25°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Source Current − Continuous @ T_A = 25°C
Total Power Dissipation @ T_A = 25°C
(Note 1)
V_DSS
V_GS
I_D
I_DM
I_S
P_D
30
Vdc
± 20 Vdc
4.0
Adc
20
Apk
1.7
Adc
2.0 Watts
Operating and Storage Temperature Range T_J, T_stg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 30 Vdc, V_GS = 5.0 Vdc,
V_DS = 20 Vdc, I_L = 9.0 Apk,
L = 10 mH, R_G = 25 W)
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from Case for 10 s)
E_AS
R_θJA
T_L
450
mJ
62.5 °C/W
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1 Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
http://onsemi.com
4 AMPERES
30 VOLTS
R_DS(on) = 85 mW
P−Channel
D
D
G
G
S
S
8
1
SO−8, Dual
CASE 751
STYLE 11
MARKING
DIAGRAM
8
DP0303
AYWW
1
A
= Assembly Location
Y
= Year
WW = Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping^†
MMDF4P03HDR2 SO−8 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
MMDF4P03HD/D