MMDF2N05ZR2 Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS

MMDF2N05ZR2
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3)
V_(BR)DSS
50
56
−
55
Vdc
−
−
mV/°C
Zero Gate Voltage Drain Current
(V_DS = 15 Vdc, V_GS = 0 Vdc)
(V_DS = 15 Vdc, V_GS = 0 Vdc, T_J = 55°C)
Gate−Body Leakage Current (V_GS = ± 15 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (Note 3)
I_DSS
I_GSS
V_GS(th)
μAdc
−
−
2.0
−
−
25
−
0.14
0.5
Vdc
2.0
3.0
4.0
−
−5.0
−
mV/°C
Static Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 1.5 Adc)
(V_GS = 5.0 Vdc, I_D = 0.6 Adc)
Forward Transconductance
(V_DS = 15 Vdc, I_D = 2.5 Adc)
(Cpk ≥ 2.0) (Note 3)
R_DS(on)
g_FS
mΩ
−
200
300
−
350
500
mMhos
−
2.0
−
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 15 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD = 30 Vdc, I_D = 0.6 Adc,
V_GS = 10 Vdc,
R_G = 25 Ω)
Gate Charge
(see figure 8)
(V_DS = 25 Vdc, I_D = 1.3 Adc,
V_GS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 2.0 Adc, V_GS = 0 Vdc)
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
−
104
−
pF
−
58
−
−
16
−
−
24
48
ns
−
46
92
−
130
260
−
71
142
−
3.3
4.6
nC
−
0.7
−
−
1.3
−
−
1.4
−
Vdc
−
0.82
1.4
Reverse Recovery Time
t_rr
(I_S = 2.0 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/μs)
t_a
t_b
Reverse Recovery Storage Charge
Q_RR
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
C_pk =
3 x SIGMA
−
66
−
ns
−
23
−
−
43
−
−
0.08
−
μC
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