MMDF2N05ZR2 Datasheet, PDF (1/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS

MMDF2N05ZR2
Preferred Device
Power MOSFET
2 Amps, 50 Volts
N−Channel SO−8, Dual
EZFETst are an advanced series of power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R_DS(on) and true
logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. EZFET devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc−dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T_A = 25°C
Drain Current − Continuous @ T_A = 70°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation @ T_A = 25°C
(Note 1.)
V_DSS
V_DGR
V_GS
I_D
I_D
I_DM
P_D
50
Vdc
50
Vdc
± 15 Vdc
2.0
Adc
1.7
8.0
Apk
2.0 Watts
Operating and Storage Temperature Range T_J, T_stg − 55 to °C
150
Thermal Resistance − Junction to Ambient
Maximum Temperature for Soldering
Purposes
R_θJA
T_L
62.5 °C/W
260
°C
1. When mounted on G10/FR−4 glass epoxy board using minimum
recommended footprint.
http://onsemi.com
2 AMPERES
50 VOLTS
R_DS(on) = 300 mW
N−Channel
D
G
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
F2N05Z
LYWW
1
F2N05Z
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2N05ZR2
SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 3
Publication Order Number:
MMDF2N05ZR2/D