MMDF1N05E Datasheet, PDF (2/5 Pages) Motorola, Inc – DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

MMDF1N05E
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0, I_D = 250 mA)
Zero Gate Voltage Drain Current
(V_DS = 50 V, V_GS = 0)
V_(BR)DSS
50
−
I_DSS
−
−
−
Vdc
2
mAdc
Gate−Body Leakage Current
(V_GS = 20 Vdc, V_DS = 0)
I_GSS
−
−
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (V_DS = V_GS, I_D = 250 mAdc)
Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 1.5 Adc)
(V_GS = 4.5 Vdc, I_D = 0.6 Adc)
Forward Transconductance (V_DS = 15 V, I_D = 1.5 A)
V_GS(th)
1.0
−
3.0
Vdc
R_DS(on)
−
R_DS(on)
−
W
−
0.30
−
0.50
g_FS
−
1.5
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V_DS = 25 V, V_GS = 0,
f = 1.0 MHz)
C_iss
C_oss
C_rss
−
330
−
pF
−
160
−
−
50
−
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = 10 V, I_D = 1.5 A, R_L = 10 W,
V_G = 10 V, R_G = 50 W)
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(V_DS = 10 V, I_D = 1.5 A,
V_GS = 10 V)
SOURCE−DRAIN DIODE CHARACTERISTICS (T_C = 25°C)
Forward Voltage (Note 2)
Reverse Recovery Time
(I_S = 1.5 A, V_GS = 0 V)
(dI_S/dt = 100 A/ms)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperature.
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_SD
t_rr
−
−
20
ns
−
−
30
−
−
40
−
−
25
−
12.5
−
nC
−
1.9
−
−
3.0
−
−
−
1.6
V
−
45
−
ns
http://onsemi.com
2