MMDF1N05E Datasheet, PDF (1/5 Pages) Motorola, Inc – DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

MMDF1N05E
Power MOSFET
1 Amp, 50 Volts
N−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. MiniMOSt
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• I_DSS Specified at Elevated Temperature
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous
Drain Current − Pulsed
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 V, V_GS = 10 V, I_L = 2 Apk)
Operating and Storage Temperature Range
Total Power Dissipation @ T_A = 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
V_DS
50
V
V_GS
± 20
V
I_D
2.0
A
I_DM
10
E_AS
300
mJ
T_J, T_stg
P_D
R_qJA
−55 to 150 °C
2.0
W
62.5 °C/W
Maximum Temperature for Soldering,
Time in Solder Bath
T_L
260
°C
10
Sec
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 8
http://onsemi.com
1 AMPERE, 50 VOLTS
R_DS(on) = 300 mW
N−Channel
D
G
S
MARKING
DIAGRAM
8
1
SO−8
CASE 751
STYLE 11
8
F1N05
AYWWG
G
1
F1N05 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping^†
MMDF1N05ER2
SO−8 2,500/Tape & Reel
MMDF1N05ER2G SO−8 2,500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMDF1N05E/D