MMDF1300 Datasheet, PDF (2/4 Pages) ON Semiconductor – Power MOSFET 3 Amps, 25 Volts

MMDF1300
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Polarity Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Notes 2. & 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.0 Adc)
V(BR)DSS
–
30
IDSS
(N)
–
(P)
–
IGSS
–
–
VGS(th)
(N)
1.0
(P)
1.0
RDS(on)
(N)
–
(P)
–
RDS(on)
(N)
–
(P)
–
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
gFS
(N)
1.0
(P)
1.0
Ciss
(N)
–
(P)
–
Coss
(N)
–
(P)
–
Crss
(N)
–
(P)
–
SWITCHING CHARACTERISTICS (Note 4.)
Turn–On Delay Time
td(on)
(N)
–
(P)
–
Rise Time
Turn–Off Delay Time
(VDD = 10 Vdc,
ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
tr
(N)
–
(P)
–
td(off)
(N)
–
(P)
–
Fall Time
tf
(N)
–
(P)
–
Total Gate Charge
QT
(N)
–
(P)
–
(VDS = 16 Vdc,
ID = 2.0 Adc,
VGS = 4.5 Vdc)
Q1
(N)
–
(P)
–
Q2
(N)
–
(P)
–
Q3
(N)
–
(P)
–
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Negative signs for P–Channel device omitted for clarity.
4. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
–
–
–
1.0
µAdc
–
1.0
–
±100
nAdc
1.5
2.0
Vdc
2.0
3.0
0.09
0.10
Ohms
0.16
0.21
Ohms
0.13
0.16
0.30
0.375
–
–
mhos
–
–
215
301
pF
200
300
111
158
100
160
30
60
40
75
18
36
ns
14
28
98
196
95
180
16
32
22
45
30
60
40
80
3.3
5.0
nC
7.0
10
1.2
–
1.2
–
2.0
–
2.5
–
1.9
–
3.5
–
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