MMDF1300 Datasheet, PDF (1/4 Pages) ON Semiconductor – Power MOSFET 3 Amps, 25 Volts

MMDF1300
Power MOSFET
3 Amps, 25 Volts
Complementary SO–8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive – Can be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package – Saves Board Space
• Diode Exhibits High Speed, with Soft Recovery
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current – Continuous
N–Channel
P–Channel
VDSS
25
Vdc
VGS ± 20 Vdc
ID
Adc
3.0
2.0
Drain Current – Pulsed
N–Channel
P–Channel
IDM
Apk
9.0
6.0
Operating and Storage Temperature Range
TJ, Tstg –65 to °C
+150
Total Power Dissipation @ TA = 25°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc,
IL = 3.0 Apk, L = 25 mH, RG = 25 W)
Thermal Resistance – Junction–to–Ambient
(Note 1.)
PD
EAS
1.8 Watts
mJ
113
R_θJA 66.3 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 sec.
TL
260 °C
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
http://onsemi.com
3 AMPERES
25 VOLTS
RDS(on) = 100 mW (N–Channel)
RDS(on) = 210 mW (P–Channel)
N–Channel
D
P–Channel
D
G
G
S
S
MARKING
DIAGRAM
SO–8, Dual
1300
8
CASE 751
LYWW
STYLE 11
1
1300
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source–1
Gate–1
Source–2
Gate–2
18
27
36
45
Top View
Drain–1
Drain–1
Drain–2
Drain–2
ORDERING INFORMATION
Device
MMDF1300R2
Package
Shipping
SO–8 2500 Tape & Reel
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MMDF1300/D