MMBV3700LT1_06 Datasheet, PDF (2/4 Pages) ON Semiconductor – High Voltage Silicon Pin Diodes

MMBV3700LT1, MPN3700
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I_R = 10 mAdc)
Diode Capacitance (V_R = 20 Vdc, f = 1.0 MHz)
Series Resistance (Figure 5) (I_F = 10 mAdc)
Reverse Leakage Current (V_R = 150 Vdc)
Reverse Recovery Time (I_F = I_R = 10 mAdc)
Symbol
V_(BR)R
C_T
R_S
I_R
t_rr
Min
Typ
Max
200
−
−
−
−
1.0
−
0.7
1.0
−
−
0.1
−
300
−
Unit
Vdc
pF
W
mAdc
ns
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
TYPICAL CHARACTERISTICS
800
700
T_A = 25°C
600
500
400
T_A = 25°C
300
200
100
2.0 4.0 6.0 8.0 10 12 14 16
I_F, FORWARD CURRENT (mA)
Figure 1. Series Resistance
0
0.7
0.8
0.9
1.0
V_F, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
T_A = 25°C
0 −10 −20 −30 −40 −50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001
−60
V_R = 15 Vdc
−20 0 +20
+60
+100
+140
T_A, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
ORDERING INFORMATION
Device
MMBV3700LT1
Package
SOT−23
Shipping^†
3000 / Tape & Reel
MMBV3700LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MPN3700
TO−92
1000 Units / Bulk
MPN3700G
TO−92
(Pb−Free)
1000 Units / Bulk
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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