MMBV3700LT1G_09 Datasheet, PDF (2/3 Pages) ON Semiconductor – High Voltage Silicon Pin Diodes

MMBV3700LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (I_R = 10 mA)
V_(BR)R
200
−
−
V
Diode Capacitance (V_R = 20 V, f = 1.0 MHz)
Series Resistance (Figure 5) (I_F = 10 mA)
C_T
−
−
1.0
pF
R_S
−
0.7
1.0
W
Reverse Leakage Current (V_R = 150 V)
I_R
−
−
0.1
mA
Reverse Recovery Time (I_F = I_R = 10 mA)
t_rr
−
300
−
ns
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
8.0
6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
TYPICAL CHARACTERISTICS
800
700
T_A = 25°C
600
500
400
T_A = 25°C
300
200
100
2.0 4.0 6.0 8.0 10 12 14 16
I_F, FORWARD CURRENT (mA)
Figure 1. Series Resistance
0
0.7
0.8
0.9
1.0
V_F, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
T_A = 25°C
0 -10 -20 -30 -40 -50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001
-60
V_R = 15 V
-20 0 +20
+60
+100
+140
T_A, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
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