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MMBV3700LT1G_09 Datasheet, PDF (1/3 Pages) ON Semiconductor – High Voltage Silicon Pin Diodes | |||
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MMBV3700LT1G
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in generalâpurpose switching
circuits. They are supplied in a costâeffective plastic package for
economical, highâvolume consumer and industrial requirements.
They are also available in surface mount.
Features
⢠Long Reverse Recovery Time trr = 300 ns (Typ)
⢠Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
⢠Low Series Resistance @ 100 MHz â
RS = 0.7 W (Typ) @ IF = 10 mA
⢠Reverse Breakdown Voltage = 200 V (Min)
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Symbol
VR
PD
Value
200
200
2.8
Unit
V
mW
mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg â55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
SOTâ23
1
Anode
3
Cathode
3
1
2
MARKING
DIAGRAM
4R M G
G
1
SOTâ23 (TOâ236AB)
CASE 318 â08
STYLE 8
4R = Specific Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
MMBV3700LT1G SOTâ23 3000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 â Rev. 5
Publication Order Number:
MMBV3700LT1/D
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