MMBV3401LT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Silicon Pin Diode

MMBV3401LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I_R = 10 mAdc)
V_(BR)R
35
−
−
Vdc
Diode Capacitance
(V_R = 20 Vdc)
Series Resistance (Figure 1)
(I_F = 10 mAdc, f = 100 MHz)
Reverse Leakage Current
(V_R = 25 Vdc)
C_T
−
−
1.0
pF
R_S
−
−
0.7
W
I_R
−
−
0.1
mAdc
TYPICAL CHARACTERISTICS
1.6
50
1.4
40
1.2
T_A = 25°C
1.0
30
0.8
T_A = 25°C
0.6
20
0.4
10
0.2
0
0 2.0 4.0 6.0 8.0 10 12 14 16
I_F, FORWARD CURRENT (mA)
Figure 1. Series Resistance
0
0.5
0.6
0.7
0.8
0.9
1.0
V_F, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
20
10
7.0
5.0
T_A = 25°C
2.0
1.0
0.7
0.5
0.2
+3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 -21 -24 -27
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001
-60
V_R = 25 Vdc
-20 0 +20
+60
+100
+140
T_A, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
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