MMBV3401LT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – Silicon Pin Diode

MMBV3401LT1G
Silicon Pin Diode
This device is designed primarily for VHF band switching
applications but is also suitable for use in general−purpose switching
circuits. Supplied in a Surface Mount package.
Features
• Rugged PIN Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance − 0.7 pF (Typ) at V_R = 20 Vdc
• Very Low Series Resistance at 100 MHz
0.34 W (Typ) @ I_F = 10 mAdc
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
35
Vdc
P_D
mW
200
mW/°C
2.0
Junction Temperature
T_J
+125
°C
Storage Temperature Range
T_stg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
3
Cathode
1
Anode
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 8
MARKING DIAGRAM
4D M G
G
1
4D
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBV3401LT1G SOT−23 3000 Tape & Reel
(Pb−Free)
MMBV3401LT3G SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 6
Publication Order Number:
MMBV3401LT1/D