MMBV3102LT1 Datasheet, PDF (2/3 Pages) Leshan Radio Company – Silicon Tuning Diode

MMBV3102LT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(I_R = 10 mAdc)
V_(BR)R
Reverse Voltage Leakage Current
I_R
(V_R = 25 Vdc, T_A = 25°C)
Diode Capacitance Temperature Coefficient
TC_C
(V_R = 4.0 Vdc, f = 1.0 MHz)
Min
Typ
Max
Unit
30
−
−
Vdc
−
−
0.1
mAdc
−
300
−
ppm/°C
Device
MMBV3102LT1
C_t, Diode Capacitance
V_R = 3.0 Vdc, f = 1.0 MHz
pF
Min
Nom
Max
20
22
25
Q, Figure of Merit
V_R = 3.0 Vdc
f = 50 MHz
Min
200
C_R, Capacitance Ratio
C₃/C₂₅
f = 1.0 MHz
Min
Typ
4.5
4.8
TYPICAL CHARACTERISTICS
40
36
32
28
24
20
16
12
8.0
4.0
0
0.3
f = 1.0 MHz
T_A = 25°C
0.5
1.0
2.0 3.0 5.0
10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
20 30
20
T_A = 25°C
10 f = 50 MHz
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0 3.0 6.0 9.0 12 15 18 21 24 27 30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 2. Figure of Merit
100
10
1.0
0.1
0.01
0.001
−60
V_R = 20 Vdc
−20 0 +20
+60
+100
T_A, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
1.04
1.03
V_R = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
+140
−75 −50 −25 0 +25 +50 +75 +100 +125
T_A, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
NOTES ON TESTING AND SPECIFICATIONS
1. C_R is the ratio of C_T measured at 3.0 Vdc divided by C_T measured at 25 Vdc.
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